MRAM, which is suitable for use in a system-on-a-chip (SoC). At the event on May 24 in the United States the manufacturer wants to explain his new manufacturing technology for the fast memory in detail.
the storage technology MRAM (Magnetoresistive random access memory) is being developed for decades. It promises low energy requirements for the storage of information and can hold data even when disconnected power supply through the non-volatile storage. Due to the complicated and costly production she came, but despite considerable advantages do not have niche applications, although the production in large series production was announced again and again. MRAM was often regarded as DRAM’s successor, consumers especially when used in mobile devices to take advantage of the.
among other things worked Toshiba MRAM memory, reducing the power consumption of mobile processors two-thirds as cache memory should be. In addition, it was intended as a replacement for Flash and DRAM memory of MRAM. Toshiba used in the so-called spin-torque technology, in which the spin of an electron is used to set the orientation of magnetic bits. That reduce the demand for electricity during write operations.
Samsung and Center IBM reported last year by the joint development of MRAM manufacturing process with STT technology ( spin-transfer torque ). This next-generation MRAM should in particular for -sensors, wearables and mobile devices are currently using NAND Flash for data storage.
has now created one with integrated MRAM the prototype SoC Samsung’s device solutions business and will it present on the Foundry Forum this month, as reported by the Korean Etnews. As the first Foundry customer of Samsung, NXP gave therefore embedded MRAM production in order.
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